P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Plotis
1.25mm
Transistor Material
Si
Serija
OptiMOS P
Minimali darbinė temperatūra
-55 °C
Aukštis
0.8mm
Produkto aprašymas
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 0,116
Each (On a Reel of 500) (be PVM)
€ 0,14
Each (On a Reel of 500) (su PVM)
500
€ 0,116
Each (On a Reel of 500) (be PVM)
€ 0,14
Each (On a Reel of 500) (su PVM)
500
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 500 - 500 | € 0,116 | € 57,75 |
| 1000 - 2000 | € 0,109 | € 54,60 |
| 2500 - 4500 | € 0,104 | € 51,98 |
| 5000 - 12000 | € 0,098 | € 48,82 |
| 12500+ | € 0,092 | € 46,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-323
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Plotis
1.25mm
Transistor Material
Si
Serija
OptiMOS P
Minimali darbinė temperatūra
-55 °C
Aukštis
0.8mm
Produkto aprašymas
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products