Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1

RS kodas: 753-2848Gamintojas: InfineonGamintojo kodas: BSS192P
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

250 V

Pakuotės tipas

SOT-89

Serija

SIPMOS®

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

4.5mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Plotis

2.5mm

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 1,37

€ 0,137 Each (In a Pack of 10) (be PVM)

€ 1,66

€ 0,166 Each (In a Pack of 10) (su PVM)

Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 1,37
20€ 2,74
30€ 4,10
40€ 5,47
50€ 6,84
60€ 8,21
70€ 9,58
80€ 10,94
90€ 12,31
100€ 13,68
110€ 15,05
120€ 16,42
130€ 17,78
140€ 19,15
150€ 20,52
sticker-462

€ 1,37

€ 0,137 Each (In a Pack of 10) (be PVM)

€ 1,66

€ 0,166 Each (In a Pack of 10) (su PVM)

Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 1,37
20€ 2,74
30€ 4,10
40€ 5,47
50€ 6,84
60€ 8,21
70€ 9,58
80€ 10,94
90€ 12,31
100€ 13,68
110€ 15,05
120€ 16,42
130€ 17,78
140€ 19,15
150€ 20,52
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

250 V

Pakuotės tipas

SOT-89

Serija

SIPMOS®

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

4.5mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Plotis

2.5mm

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more