Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-323 (SC-70)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Plotis
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
0.8mm
Serija
SIPMOS
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,166
Each (On a Reel of 500) (be PVM)
€ 0,201
Each (On a Reel of 500) (su PVM)
500
€ 0,166
Each (On a Reel of 500) (be PVM)
€ 0,201
Each (On a Reel of 500) (su PVM)
500
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
500 - 1000 | € 0,166 | € 82,95 |
1500 - 2500 | € 0,111 | € 55,65 |
3000 - 5500 | € 0,086 | € 43,05 |
6000+ | € 0,076 | € 37,80 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-323 (SC-70)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Plotis
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
0.8mm
Serija
SIPMOS
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.