Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Serija
SIPMOS
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Ilgis
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Plotis
1.3mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 0,051
Each (On a Reel of 10000) (be PVM)
€ 0,062
Each (On a Reel of 10000) (su PVM)
10000
€ 0,051
Each (On a Reel of 10000) (be PVM)
€ 0,062
Each (On a Reel of 10000) (su PVM)
10000
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
10000 - 10000 | € 0,051 | € 514,50 |
20000 - 20000 | € 0,048 | € 483,00 |
30000+ | € 0,046 | € 462,00 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Serija
SIPMOS
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Ilgis
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Plotis
1.3mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.