Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Serija
SIPMOS
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Transistor Material
Si
Plotis
1.3mm
Number of Elements per Chip
1
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,069
Each (On a Reel of 3000) (be PVM)
€ 0,084
Each (On a Reel of 3000) (su PVM)
3000
€ 0,069
Each (On a Reel of 3000) (be PVM)
€ 0,084
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
3000 - 3000 | € 0,069 | € 207,90 |
6000 - 12000 | € 0,065 | € 195,30 |
15000+ | € 0,061 | € 182,70 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Serija
SIPMOS
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Transistor Material
Si
Plotis
1.3mm
Number of Elements per Chip
1
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.