N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6433XTMA1

RS kodas: 826-9317Gamintojas: InfineonGamintojo kodas: BSS123NH6433XTMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Plotis

1.3mm

Transistor Material

Si

Serija

OptiMOS

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,149

Each (On a Reel of 500) (be PVM)

€ 0,18

Each (On a Reel of 500) (su PVM)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6433XTMA1
sticker-462

€ 0,149

Each (On a Reel of 500) (be PVM)

€ 0,18

Each (On a Reel of 500) (su PVM)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6433XTMA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
500 - 500€ 0,149€ 74,55
1000 - 2000€ 0,10€ 49,88
2500 - 4500€ 0,092€ 46,20
5000 - 12000€ 0,086€ 43,05
12500+€ 0,081€ 40,42

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Plotis

1.3mm

Transistor Material

Si

Serija

OptiMOS

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more