N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6327XTSA1

RS kodas: 827-0011Gamintojas: InfineonGamintojo kodas: BSS123NH6327XTSA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Aukštis

1mm

Serija

OptiMOS

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,12

Each (On a Reel of 500) (be PVM)

€ 0,145

Each (On a Reel of 500) (su PVM)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6327XTSA1
sticker-462

€ 0,12

Each (On a Reel of 500) (be PVM)

€ 0,145

Each (On a Reel of 500) (su PVM)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS123NH6327XTSA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
500 - 500€ 0,12€ 59,85
1000 - 2000€ 0,089€ 44,62
2500 - 4500€ 0,082€ 40,95
5000 - 12000€ 0,078€ 38,85
12500+€ 0,071€ 35,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Aukštis

1mm

Serija

OptiMOS

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more