N-Channel MOSFET Transistor, 170 mA, 100 V, 3-Pin SOT-23 Infineon BSS123

RS kodas: 445-2297Gamintojas: InfineonGamintojo kodas: BSS123
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.78 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Plotis

1.3mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

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Galbūt jus domina
N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
€ 0,288Už kiekviena vnt. (tiekiama riteje) (be PVM)
N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123
€ 0,30Each (In a Pack of 10) (be PVM)

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P.O.A.

N-Channel MOSFET Transistor, 170 mA, 100 V, 3-Pin SOT-23 Infineon BSS123
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P.O.A.

N-Channel MOSFET Transistor, 170 mA, 100 V, 3-Pin SOT-23 Infineon BSS123
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
€ 0,288Už kiekviena vnt. (tiekiama riteje) (be PVM)
N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123
€ 0,30Each (In a Pack of 10) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.78 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Plotis

1.3mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
€ 0,288Už kiekviena vnt. (tiekiama riteje) (be PVM)
N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123
€ 0,30Each (In a Pack of 10) (be PVM)