N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
6.5mm
Aukštis
1.6mm
Serija
SIPMOS
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,439
Each (On a Reel of 1000) (be PVM)
€ 0,531
Each (On a Reel of 1000) (su PVM)
1000
€ 0,439
Each (On a Reel of 1000) (be PVM)
€ 0,531
Each (On a Reel of 1000) (su PVM)
1000
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 1000 - 1000 | € 0,439 | € 438,90 |
| 2000 - 2000 | € 0,417 | € 416,85 |
| 3000+ | € 0,391 | € 390,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
6.5mm
Aukštis
1.6mm
Serija
SIPMOS
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products