Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP170PH6327XTSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Serija
SIPMOS®
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Plotis
3.5mm
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 331,55
€ 0,332 Each (On a Reel of 1000) (be PVM)
€ 401,18
€ 0,402 Each (On a Reel of 1000) (su PVM)
1000
€ 331,55
€ 0,332 Each (On a Reel of 1000) (be PVM)
€ 401,18
€ 0,402 Each (On a Reel of 1000) (su PVM)
1000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 1000 - 1000 | € 0,332 | € 331,55 |
| 2000 - 2000 | € 0,315 | € 315,40 |
| 3000+ | € 0,295 | € 295,45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Serija
SIPMOS®
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Plotis
3.5mm
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products