Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
240 V
Pakuotės tipas
SOT-223
Serija
SIPMOS®
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
3.8 nC @ 5 V
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 2,54
€ 0,507 Each (In a Pack of 5) (be PVM)
€ 3,07
€ 0,614 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 2,54
€ 0,507 Each (In a Pack of 5) (be PVM)
€ 3,07
€ 0,614 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 0,507 | € 2,54 |
| 50 - 120 | € 0,455 | € 2,28 |
| 125 - 245 | € 0,42 | € 2,10 |
| 250 - 495 | € 0,39 | € 1,95 |
| 500+ | € 0,367 | € 1,83 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
240 V
Pakuotės tipas
SOT-223
Serija
SIPMOS®
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
3.8 nC @ 5 V
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products