Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1550 W
Pakuotės tipas
62MM Module
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Ilgis
106.4mm
Matmenys
106.4 x 61.4 x 36.5mm
Maksimali darbinė temperatūra
+150 °C
Plotis
61.4mm
Kilmės šalis
Singapore
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 236,25
Each (In a Tray of 10) (be PVM)
€ 285,862
Each (In a Tray of 10) (su PVM)
10
€ 236,25
Each (In a Tray of 10) (be PVM)
€ 285,862
Each (In a Tray of 10) (su PVM)
10
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1550 W
Pakuotės tipas
62MM Module
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Ilgis
106.4mm
Matmenys
106.4 x 61.4 x 36.5mm
Maksimali darbinė temperatūra
+150 °C
Plotis
61.4mm
Kilmės šalis
Singapore
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.