Dual N-Channel MOSFET, 13 A, 100 V, 8-Pin TDSON Infineon BSC750N10NDGATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
26 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.9mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5.15mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Serija
OptiMOS 2
Kilmės šalis
Singapore
Produkto aprašymas
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,696
Each (On a Reel of 5000) (be PVM)
€ 0,842
Each (On a Reel of 5000) (su PVM)
5000
€ 0,696
Each (On a Reel of 5000) (be PVM)
€ 0,842
Each (On a Reel of 5000) (su PVM)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
26 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.9mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5.15mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Serija
OptiMOS 2
Kilmės šalis
Singapore
Produkto aprašymas
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products