N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

RS kodas: 171-1952Gamintojas: InfineonGamintojo kodas: BSC12DN20NS3GATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.35mm

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Aukštis

1.1mm

Serija

BSC12DN20NS3 G

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 1,155

Each (In a Pack of 10) (be PVM)

€ 1,398

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 1,155

Each (In a Pack of 10) (be PVM)

€ 1,398

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 1,155€ 11,55
50 - 90€ 1,102€ 11,02
100 - 240€ 1,009€ 10,09
250 - 490€ 0,907€ 9,07
500+€ 0,863€ 8,63

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.35mm

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Aukštis

1.1mm

Serija

BSC12DN20NS3 G

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more