N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

RS kodas: 170-2290Gamintojas: InfineonGamintojo kodas: BSC12DN20NS3GATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.35mm

Aukštis

1.1mm

Serija

BSC12DN20NS3 G

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,688

Each (On a Reel of 5000) (be PVM)

€ 0,832

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

5000

Galima įsigyti kartotiną kiekį 5000
5000€ 3 438,75
10000€ 6 877,50
15000€ 10 316,25
20000€ 13 755,00
25000€ 17 193,75
30000€ 20 632,50
35000€ 24 071,25
40000€ 27 510,00
45000€ 30 948,75
50000€ 34 387,50
55000€ 37 826,25
60000€ 41 265,00
65000€ 44 703,75
70000€ 48 142,50
75000€ 51 581,25
sticker-462

€ 0,688

Each (On a Reel of 5000) (be PVM)

€ 0,832

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Sandėlio informacija laikinai nepasiekiama.

5000

Galima įsigyti kartotiną kiekį 5000
5000€ 3 438,75
10000€ 6 877,50
15000€ 10 316,25
20000€ 13 755,00
25000€ 17 193,75
30000€ 20 632,50
35000€ 24 071,25
40000€ 27 510,00
45000€ 30 948,75
50000€ 34 387,50
55000€ 37 826,25
60000€ 41 265,00
65000€ 44 703,75
70000€ 48 142,50
75000€ 51 581,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.35mm

Aukštis

1.1mm

Serija

BSC12DN20NS3 G

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more