N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1

RS kodas: 171-1963Gamintojas: InfineonGamintojo kodas: BSC070N10NS5ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Serija

BSC070N10NS5

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.49mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

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€ 1,628

Each (In a Pack of 10) (be PVM)

€ 1,97

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 1,628

Each (In a Pack of 10) (be PVM)

€ 1,97

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 1,628€ 16,28
50 - 90€ 1,26€ 12,60
100 - 240€ 1,208€ 12,08
250 - 490€ 1,102€ 11,02
500+€ 1,045€ 10,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Serija

BSC070N10NS5

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.49mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more