N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC046N10NS3GATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
6.1mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Aukštis
1.1mm
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,26
Each (On a Reel of 5000) (be PVM)
€ 1,525
Each (On a Reel of 5000) (su PVM)
5000
€ 1,26
Each (On a Reel of 5000) (be PVM)
€ 1,525
Each (On a Reel of 5000) (su PVM)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TDSON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
6.1mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Aukštis
1.1mm
Serija
OptiMOS 3
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products