N-Channel MOSFET, 82 A, 25 V, 8-Pin SuperSO Infineon BSC026NE2LS5ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
82 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SuperSO
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
29 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5.49mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Aukštis
1.1mm
Serija
OptiMOS 5
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,476
Each (On a Reel of 5000) (be PVM)
€ 0,576
Each (On a Reel of 5000) (su PVM)
5000
€ 0,476
Each (On a Reel of 5000) (be PVM)
€ 0,576
Each (On a Reel of 5000) (su PVM)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
82 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SuperSO
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
29 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
5.49mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Aukštis
1.1mm
Serija
OptiMOS 5
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products