N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC026N08NS5ATMA1

RS kodas: 171-1983Gamintojas: InfineonGamintojo kodas: BSC026N08NS5ATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Serija

BSC026N08NS5

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.49mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Plotis

6.35mm

Number of Elements per Chip

1

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

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€ 3,308

Each (In a Pack of 10) (be PVM)

€ 4,003

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC026N08NS5ATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 3,308

Each (In a Pack of 10) (be PVM)

€ 4,003

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC026N08NS5ATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 3,308€ 33,08
100 - 490€ 2,835€ 28,35
500 - 990€ 2,468€ 24,68
1000 - 2490€ 2,152€ 21,52
2500+€ 2,10€ 21,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Serija

BSC026N08NS5

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.49mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Plotis

6.35mm

Number of Elements per Chip

1

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more