N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC022N04LSATMA1

RS kodas: 170-2289Gamintojas: InfineonGamintojo kodas: BSC022N04LSATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.49mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Plotis

6.35mm

Aukštis

1.1mm

Serija

BSC022N04LS

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

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€ 1,628

Each (On a Reel of 5000) (be PVM)

€ 1,97

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC022N04LSATMA1
sticker-462

€ 1,628

Each (On a Reel of 5000) (be PVM)

€ 1,97

Each (On a Reel of 5000) (su PVM)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC022N04LSATMA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
5000 - 5000€ 1,628€ 8 137,50
10000 - 10000€ 1,575€ 7 875,00
15000+€ 1,522€ 7 612,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.49mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Plotis

6.35mm

Aukštis

1.1mm

Serija

BSC022N04LS

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more