N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSATMA1

RS kodas: 171-1961Gamintojas: InfineonGamintojo kodas: BSC014N04LSATMA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.15mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.15mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Serija

BSC014N04LS

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Forward Diode Voltage

1V

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€ 1,575

Each (In a Pack of 10) (be PVM)

€ 1,906

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSATMA1
Pasirinkite pakuotės tipą
sticker-462

€ 1,575

Each (In a Pack of 10) (be PVM)

€ 1,906

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSATMA1
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 1,575€ 15,75
50 - 90€ 1,26€ 12,60
100 - 240€ 1,208€ 12,08
250 - 490€ 1,102€ 11,02
500+€ 1,035€ 10,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

TDSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

6.15mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5.15mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Serija

BSC014N04LS

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more