Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SuperSO8 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
36 nC @ 10 V
Ilgis
5.49mm
Aukštis
1.1mm
Serija
OptiMOS 5
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.62V
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,572
Each (In a Pack of 5) (be PVM)
€ 3,112
Each (In a Pack of 5) (su PVM)
5
€ 2,572
Each (In a Pack of 5) (be PVM)
€ 3,112
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 20 | € 2,572 | € 12,86 |
25 - 45 | € 2,31 | € 11,55 |
50 - 120 | € 2,152 | € 10,76 |
125 - 245 | € 2,048 | € 10,24 |
250+ | € 1,89 | € 9,45 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SuperSO8 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
36 nC @ 10 V
Ilgis
5.49mm
Aukštis
1.1mm
Serija
OptiMOS 5
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.62V
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.