Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Serija
OptiMOS™ 5
Pakuotės tipas
SuperSO8 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Number of Elements per Chip
1
Ilgis
5.49mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Aukštis
1.1mm
Forward Diode Voltage
1V
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3 230,00
€ 0,646 Each (On a Reel of 5000) (be PVM)
€ 3 908,30
€ 0,782 Each (On a Reel of 5000) (su PVM)
5000
€ 3 230,00
€ 0,646 Each (On a Reel of 5000) (be PVM)
€ 3 908,30
€ 0,782 Each (On a Reel of 5000) (su PVM)
5000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Serija
OptiMOS™ 5
Pakuotės tipas
SuperSO8 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Number of Elements per Chip
1
Ilgis
5.49mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Aukštis
1.1mm
Forward Diode Voltage
1V
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products