N-Channel MOSFET, 90 A, 60 V, 7-Pin MG-WDSON-2 Infineon BSB028N06NN3GXUMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
MG-WDSON-2
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.05mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
108 nC @ 10 V
Ilgis
6.35mm
Minimali darbinė temperatūra
-40 °C
Aukštis
0.53mm
Serija
OptiMOS 3
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,365
Each (On a Reel of 5000) (be PVM)
€ 1,652
Each (On a Reel of 5000) (su PVM)
5000
€ 1,365
Each (On a Reel of 5000) (be PVM)
€ 1,652
Each (On a Reel of 5000) (su PVM)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
MG-WDSON-2
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.05mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
108 nC @ 10 V
Ilgis
6.35mm
Minimali darbinė temperatūra
-40 °C
Aukštis
0.53mm
Serija
OptiMOS 3
Forward Diode Voltage
1.2V
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products