N-Channel MOSFET, 19 A, 300 V, 3-Pin D2PAK Infineon AUIRFS6535
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
300 V
Serija
HEXFET
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.185 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si
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€ 4,358
Each (In a Tube of 50) (be PVM)
€ 5,273
Each (In a Tube of 50) (su PVM)
50
€ 4,358
Each (In a Tube of 50) (be PVM)
€ 5,273
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 100 | € 4,358 | € 217,88 |
| 150+ | € 4,20 | € 210,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
300 V
Serija
HEXFET
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.185 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products