N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2

RS kodas: 752-7773PGamintojas: InfineonGamintojo kodas: 2N7002H6327XTSA2
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Serija

OptiMOS

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Plotis

1.3mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,098

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,119

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
Pasirinkite pakuotės tipą
sticker-462

€ 0,098

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,119

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
100 - 900€ 0,098€ 9,76
1000 - 2400€ 0,093€ 9,34
2500 - 4900€ 0,089€ 8,92
5000 - 9900€ 0,085€ 8,50
10000+€ 0,08€ 7,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Serija

OptiMOS

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Plotis

1.3mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more