Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.25mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Aukštis
0.8mm
Serija
OptiMOS
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 0,09
Each (On a Reel of 3000) (be PVM)
€ 0,109
Each (On a Reel of 3000) (su PVM)
3000
€ 0,09
Each (On a Reel of 3000) (be PVM)
€ 0,109
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 3000 - 3000 | € 0,09 | € 270,90 |
| 6000 - 12000 | € 0,086 | € 258,30 |
| 15000+ | € 0,082 | € 245,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.25mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Aukštis
0.8mm
Serija
OptiMOS
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products