Technical Document
Specifications
Brand
Fuji ElectricChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
600 V
Series
Super J-MOS
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
220 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.03mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
73 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
Japan
Product details
N-Channel Power MOSFET, Super J MOS, Fuji Electric
N-Channel enhancement mode power MOSFETs
- Low on-resistance
- Low noise
- Low switching loss
MOSFET Transistors, Fuji Electric
€ 9.30
€ 9.30 Each (Exc. Vat)
€ 11.25
€ 11.25 Each (inc. VAT)
1

€ 9.30
€ 9.30 Each (Exc. Vat)
€ 11.25
€ 11.25 Each (inc. VAT)
Stock information temporarily unavailable.
1

Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 9.30 |
| 10 - 49 | € 7.90 |
| 50 - 99 | € 7.20 |
| 100 - 199 | € 6.70 |
| 200+ | € 6.30 |
Technical Document
Specifications
Brand
Fuji ElectricChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
600 V
Series
Super J-MOS
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
220 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.03mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
73 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
Japan
Product details
N-Channel Power MOSFET, Super J MOS, Fuji Electric
N-Channel enhancement mode power MOSFETs
- Low on-resistance
- Low noise
- Low switching loss


