Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
360 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.9 x 5.03 x 20.95mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 9,87
Each (In a Tube of 30) (be PVM)
€ 11,943
Each (In a Tube of 30) (su PVM)
30
€ 9,87
Each (In a Tube of 30) (be PVM)
€ 11,943
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
30 - 120 | € 9,87 | € 296,10 |
150 - 270 | € 8,925 | € 267,75 |
300+ | € 8,085 | € 242,55 |
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
360 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.9 x 5.03 x 20.95mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.