Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
205 W
Pakuotės tipas
M711
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
24
Transistor Configuration
3 Phase
Matmenys
107.5 x 45 x 17mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 133,35
už 1 vnt. (be PVM)
€ 161,35
už 1 vnt. (su PVM)
1
€ 133,35
už 1 vnt. (be PVM)
€ 161,35
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 133,35 |
2 - 4 | € 121,80 |
5 - 9 | € 118,65 |
10 - 19 | € 115,50 |
20+ | € 113,40 |
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
205 W
Pakuotės tipas
M711
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
24
Transistor Configuration
3 Phase
Matmenys
107.5 x 45 x 17mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.