Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Pakuotės tipas
M711
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
24
Transistor Configuration
3 Phase
Matmenys
107.5 x 45 x 17mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 57,225
Each (In a Box of 10) (be PVM)
€ 69,242
Each (In a Box of 10) (su PVM)
10
€ 57,225
Each (In a Box of 10) (be PVM)
€ 69,242
Each (In a Box of 10) (su PVM)
10
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Pakuotės tipas
M711
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
24
Transistor Configuration
3 Phase
Matmenys
107.5 x 45 x 17mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.