Fuji Electric 7MBR100U4B-120-50, M712 , N-Channel 3 Phase Bridge IGBT Module, 100 A max, 1200 V, PCB Mount
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Configuration
3 Phase Bridge
Pakuotės tipas
M712
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
24
Transistor Configuration
3 Phase
Matmenys
122 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 206,85
už 1 vnt. (be PVM)
€ 250,29
už 1 vnt. (su PVM)
1
€ 206,85
už 1 vnt. (be PVM)
€ 250,29
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 206,85 |
| 2 - 4 | € 191,10 |
| 5 - 9 | € 185,85 |
| 10 - 19 | € 181,65 |
| 20+ | € 177,45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Configuration
3 Phase Bridge
Pakuotės tipas
M712
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
24
Transistor Configuration
3 Phase
Matmenys
122 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products