Fuji Electric 7MBP50RA-120-55, P 610 , N-Channel 3 Phase IGBT Module, 50 A max, 1200 V, PCB Mount
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
357 W
Pakuotės tipas
P 610
Configuration
3 Phase
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
22
Transistor Configuration
3 Phase
Matmenys
109 x 88 x 22mm
Minimali darbinė temperatūra
-20 °C
Maksimali darbinė temperatūra
+100 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 169,05
už 1 vnt. (be PVM)
€ 204,55
už 1 vnt. (su PVM)
1
€ 169,05
už 1 vnt. (be PVM)
€ 204,55
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 169,05 |
| 2 - 4 | € 151,20 |
| 5 - 9 | € 144,90 |
| 10 - 19 | € 139,65 |
| 20+ | € 137,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
357 W
Pakuotės tipas
P 610
Configuration
3 Phase
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
22
Transistor Configuration
3 Phase
Matmenys
109 x 88 x 22mm
Minimali darbinė temperatūra
-20 °C
Maksimali darbinė temperatūra
+100 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products