Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Pakuotės tipas
M633
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
35
Transistor Configuration
3 Phase
Matmenys
122 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 132,30
už 1 vnt. (be PVM)
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€ 132,30
už 1 vnt. (be PVM)
€ 160,08
už 1 vnt. (su PVM)
1
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kiekis | Vieneto kaina |
---|---|
1 - 4 | € 132,30 |
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25+ | € 109,20 |
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Pakuotės tipas
M633
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
35
Transistor Configuration
3 Phase
Matmenys
122 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.