Fuji Electric 2MBi300U4J-120-50, M250 , N-Channel Series IGBT Module, 300 A max, 1200 V, PCB Mount
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.39 kW
Pakuotės tipas
M250
Configuration
Series
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
15
Transistor Configuration
Series
Matmenys
150 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 215,25
už 1 vnt. (be PVM)
€ 260,45
už 1 vnt. (su PVM)
1
€ 215,25
už 1 vnt. (be PVM)
€ 260,45
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 215,25 |
| 5 - 9 | € 198,45 |
| 10 - 24 | € 193,20 |
| 25+ | € 189,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.39 kW
Pakuotės tipas
M250
Configuration
Series
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
15
Transistor Configuration
Series
Matmenys
150 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products