Fuji Electric 1MBI600V-120-50, M153 , N-Channel IGBT Module, 600 A max, 1200 V, Panel Mount
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
3 kW
Pakuotės tipas
M153
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
4
Transistor Configuration
Single
Matmenys
108 x 62 x 36mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Modules 1-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 151,20
Each (In a Box of 10) (be PVM)
€ 182,952
Each (In a Box of 10) (su PVM)
10
€ 151,20
Each (In a Box of 10) (be PVM)
€ 182,952
Each (In a Box of 10) (su PVM)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Fuji ElectricMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
3 kW
Pakuotės tipas
M153
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
4
Transistor Configuration
Single
Matmenys
108 x 62 x 36mm
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Japan
Produkto aprašymas
IGBT Modules 1-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products