Fairchild ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
Techniniai dokumentai
Specifikacijos
Maximum Continuous Collector Current
46 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
250 W
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.67 x 9.65 x 4.83mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 1 976,00
€ 2,47 Each (On a Reel of 800) (be PVM)
€ 2 390,96
€ 2,989 Each (On a Reel of 800) (su PVM)
800
€ 1 976,00
€ 2,47 Each (On a Reel of 800) (be PVM)
€ 2 390,96
€ 2,989 Each (On a Reel of 800) (su PVM)
800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Maximum Continuous Collector Current
46 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
250 W
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.67 x 9.65 x 4.83mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products