Fairchild HGTG40N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Maximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.87 x 4.82 x 20.82mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 11,97
Each (In a Tube of 30) (be PVM)
€ 14,484
Each (In a Tube of 30) (su PVM)
30
€ 11,97
Each (In a Tube of 30) (be PVM)
€ 14,484
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 120 | € 11,97 | € 359,10 |
| 150 - 270 | € 10,395 | € 311,85 |
| 300+ | € 9,87 | € 296,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Maximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.87 x 4.82 x 20.82mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products