Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Serija
IntelliFET
Pakuotės tipas
SM
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Transistor Material
Si
Ilgis
4.95mm
Plotis
3.95mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+125 °C
Aukštis
1.5mm
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Germany
Produkto aprašymas
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.
MOSFET Transistors, Diodes Inc.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 542,45
€ 0,542 Each (On a Reel of 1000) (be PVM)
€ 656,36
€ 0,656 Each (On a Reel of 1000) (su PVM)
1000
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 542,45
€ 0,542 Each (On a Reel of 1000) (be PVM)
€ 656,36
€ 0,656 Each (On a Reel of 1000) (su PVM)
1000
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Serija
IntelliFET
Pakuotės tipas
SM
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Transistor Material
Si
Ilgis
4.95mm
Plotis
3.95mm
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+125 °C
Aukštis
1.5mm
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Germany
Produkto aprašymas
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.