P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK Diodes Inc ZXMP6A18KTC

RS kodas: 738-5178Gamintojas: DiodesZetexGamintojo kodas: ZXMP6A18KTC
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10.4 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

10.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

7.67mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.39mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 1,14

Each (In a Pack of 2) (be PVM)

€ 1,379

Each (In a Pack of 2) (su PVM)

P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK Diodes Inc ZXMP6A18KTC
Pasirinkite pakuotės tipą
sticker-462

€ 1,14

Each (In a Pack of 2) (be PVM)

€ 1,379

Each (In a Pack of 2) (su PVM)

P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK Diodes Inc ZXMP6A18KTC
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 24€ 1,14€ 2,28
26+€ 0,785€ 1,57

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10.4 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

10.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

7.67mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.39mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more