N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA

RS kodas: 708-2450Gamintojas: DiodesZetexGamintojo kodas: ZXMN6A11ZTA
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-89

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Plotis

2.6mm

Transistor Material

Si

Ilgis

4.6mm

Typical Gate Charge @ Vgs

5.7 nC @ 10 V

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

1.6mm

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,99

Each (In a Pack of 10) (be PVM)

€ 1,198

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA
Pasirinkite pakuotės tipą
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€ 0,99

Each (In a Pack of 10) (be PVM)

€ 1,198

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 0,99€ 9,90
50 - 240€ 0,884€ 8,84
250 - 490€ 0,864€ 8,64
500+€ 0,841€ 8,41

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-89

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Plotis

2.6mm

Transistor Material

Si

Ilgis

4.6mm

Typical Gate Charge @ Vgs

5.7 nC @ 10 V

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

1.6mm

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more