N-Channel MOSFET, 320 mA, 200 V, 3 + Tab-Pin SOT-223 Diodes Inc ZVNL120G

RS kodas: 178-7027Gamintojas: DiodesZetexGamintojo kodas: ZVNL120G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

200 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.55mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.55mm

Aukštis

1.65mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,39

Each (In a Tube of 120) (be PVM)

€ 0,472

Each (In a Tube of 120) (su PVM)

N-Channel MOSFET, 320 mA, 200 V, 3 + Tab-Pin SOT-223 Diodes Inc ZVNL120G
sticker-462

€ 0,39

Each (In a Tube of 120) (be PVM)

€ 0,472

Each (In a Tube of 120) (su PVM)

N-Channel MOSFET, 320 mA, 200 V, 3 + Tab-Pin SOT-223 Diodes Inc ZVNL120G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
120 - 480€ 0,39€ 46,75
600 - 1080€ 0,378€ 45,36
1200+€ 0,369€ 44,23

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

200 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.55mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.55mm

Aukštis

1.65mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more