Diodes Inc N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-223 ZVN4306GTA

RS kodas: 169-4151Gamintojas: DiodesZetexGamintojo kodas: ZVN4306GTA
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.7mm

Plotis

3.7mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.65mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Sandėlio informacija laikinai nepasiekiama.

€ 1,33

€ 1,33 už 1 vnt. (be PVM)

€ 1,61

€ 1,61 už 1 vnt. (su PVM)

Diodes Inc N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-223 ZVN4306GTA
Pasirinkite pakuotės tipą
sticker-462

€ 1,33

€ 1,33 už 1 vnt. (be PVM)

€ 1,61

€ 1,61 už 1 vnt. (su PVM)

Diodes Inc N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-223 ZVN4306GTA
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 9€ 1,33
10 - 19€ 1,28
20 - 49€ 1,19
50 - 99€ 1,14
100+€ 1,09

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

6.7mm

Plotis

3.7mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.65mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more