N-Channel MOSFET, 100 mA, 100 V, 3-Pin SOT-23 Diodes Inc ZVN3310FTA

RS kodas: 155-018Gamintojas: DiodesZetexGamintojo kodas: ZVN3310FTA
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.05mm

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,448

Each (In a Pack of 25) (be PVM)

€ 0,542

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 100 mA, 100 V, 3-Pin SOT-23 Diodes Inc ZVN3310FTA
Pasirinkite pakuotės tipą
sticker-462

€ 0,448

Each (In a Pack of 25) (be PVM)

€ 0,542

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 100 mA, 100 V, 3-Pin SOT-23 Diodes Inc ZVN3310FTA
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 125€ 0,448€ 11,21
150 - 725€ 0,389€ 9,71
750 - 1475€ 0,327€ 8,17
1500+€ 0,27€ 6,74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.05mm

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Produkto aprašymas

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more