Dual P-Channel MOSFET, 26 A, 60 V, 8-Pin DI5060 Diodes Inc DMPH6050SPD-13

RS kodas: 146-4820Gamintojas: DiodesZetexGamintojo kodas: DMPH6050SPD-13
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DI5060

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±20 V

Plotis

3.95mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

4.95mm

Typical Gate Charge @ Vgs

30.6 @ 10 V nC

Aukštis

1.05mm

Serija

DMP

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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€ 1,26

Each (In a Pack of 10) (be PVM)

€ 1,525

Each (In a Pack of 10) (su PVM)

Dual P-Channel MOSFET, 26 A, 60 V, 8-Pin DI5060 Diodes Inc DMPH6050SPD-13
Pasirinkite pakuotės tipą
sticker-462

€ 1,26

Each (In a Pack of 10) (be PVM)

€ 1,525

Each (In a Pack of 10) (su PVM)

Dual P-Channel MOSFET, 26 A, 60 V, 8-Pin DI5060 Diodes Inc DMPH6050SPD-13
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DI5060

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±20 V

Plotis

3.95mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

4.95mm

Typical Gate Charge @ Vgs

30.6 @ 10 V nC

Aukštis

1.05mm

Serija

DMP

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more