P-Channel MOSFET, 4.2 A, 60 V, 6-Pin U-DFN2020 Diodes Inc DMP6110SFDF-7

RS kodas: 146-4868Gamintojas: DiodesZetexGamintojo kodas: DMP6110SFDF-7
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

60 V

Serija

DMP

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.97 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

2.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

17.2 @ 10 V nC

Aukštis

0.58mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,176

Each (In a Pack of 10) (be PVM)

€ 0,213

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 4.2 A, 60 V, 6-Pin U-DFN2020 Diodes Inc DMP6110SFDF-7
Pasirinkite pakuotės tipą
sticker-462

€ 0,176

Each (In a Pack of 10) (be PVM)

€ 0,213

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 4.2 A, 60 V, 6-Pin U-DFN2020 Diodes Inc DMP6110SFDF-7
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

60 V

Serija

DMP

Pakuotės tipas

U-DFN2020

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.97 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

2.05mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.05mm

Typical Gate Charge @ Vgs

17.2 @ 10 V nC

Aukštis

0.58mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more