P-Channel MOSFET, 70 A, 30 V, 8-Pin PowerDI3333 Diodes Inc DMP3007SFG-7
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Serija
DMP
Pakuotės tipas
POWERDI3333
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Plotis
3.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.35mm
Aukštis
0.78mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,408
Each (On a Reel of 2000) (be PVM)
€ 0,494
Each (On a Reel of 2000) (su PVM)
2000
€ 0,408
Each (On a Reel of 2000) (be PVM)
€ 0,494
Each (On a Reel of 2000) (su PVM)
2000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Serija
DMP
Pakuotės tipas
POWERDI3333
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Plotis
3.35mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.35mm
Aukštis
0.78mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products