P-Channel MOSFET, 50 A, 30 V, 8-Pin V-DFN3333 Diodes Inc DMP3007SCG-13

RS kodas: 146-4876Gamintojas: DiodesZetexGamintojo kodas: DMP3007SCG-13
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Serija

DMP

Pakuotės tipas

V-DFN3333

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Plotis

3.35mm

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.35mm

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Aukštis

0.78mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,121

Each (In a Pack of 10) (be PVM)

€ 0,146

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 50 A, 30 V, 8-Pin V-DFN3333 Diodes Inc DMP3007SCG-13
Pasirinkite pakuotės tipą
sticker-462

€ 0,121

Each (In a Pack of 10) (be PVM)

€ 0,146

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 50 A, 30 V, 8-Pin V-DFN3333 Diodes Inc DMP3007SCG-13
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Serija

DMP

Pakuotės tipas

V-DFN3333

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Plotis

3.35mm

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.35mm

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Aukštis

0.78mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more