P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

RS kodas: 182-6916Gamintojas: DiodesZetexGamintojo kodas: DMP21D6UFD-7
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

X1-DFN1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Ilgis

1.25mm

Typical Gate Charge @ Vgs

0.8 nC @ 8V

Plotis

1.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.48mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

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€ 0,071

Each (On a Reel of 3000) (be PVM)

€ 0,086

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7
sticker-462

€ 0,071

Each (On a Reel of 3000) (be PVM)

€ 0,086

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 6000€ 0,071€ 214,20
9000 - 12000€ 0,068€ 204,75
15000+€ 0,066€ 198,45

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

X1-DFN1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Ilgis

1.25mm

Typical Gate Charge @ Vgs

0.8 nC @ 8V

Plotis

1.25mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.48mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more