P-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-323 Diodes Inc DMP2165UW-7

RS kodas: 182-6915Gamintojas: DiodesZetexGamintojo kodas: DMP2165UW-7
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Kilmės šalis

China

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€ 0,117

Each (On a Reel of 3000) (be PVM)

€ 0,141

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-323 Diodes Inc DMP2165UW-7
sticker-462

€ 0,117

Each (On a Reel of 3000) (be PVM)

€ 0,141

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-323 Diodes Inc DMP2165UW-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more